| PART |
Description |
Maker |
| SST37VF512 |
(SST37VFxxx) 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
|
Silicon Storage Technology
|
| S79FL256S |
256 Mbit (32 MB)/512 Mbit (64 MB), 3 V, Dual-Quad SPI Flash
|
Cypress Semiconductor
|
| M36P0R9060N0 |
512 Mbit Flash memory 64 Mbit (Burst) PSRAM
|
Numonyx
|
| M36P0R9060E0 |
512 Mbit Flash memory 64 Mbit (Burst) PSRAM
|
Numonyx
|
| SST27SF010-70-3C-NHE SST27SF010-70-3C-PHE SST27SF0 |
512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
|
SST[Silicon Storage Technology, Inc]
|
| M36W0R6050B3 M36W0R6050B3ZAQE M36W0R6050B3ZAQF M36 |
SPECIALTY MEMORY CIRCUIT, PBGA107
64-Mbit (4 Mbits 隆驴16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 隆驴16) or 32-Mbit (2 Mbits x16) PSRAM MCP
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V
|
| CY14B108L-ZS45XIT CY14B108N-ZSP25XI CY14B108L-BA25 |
8-Mbit (1024 K ? 8/512 K ? 16) nvSRAM
8-Mbit (1024 K × 8/512 K × 16) nvSRAM
|
Cypress Semiconductor
|
| CY62157EV18 |
8-Mbit (512 K x 16) Static RAM
|
Cypress Semiconductor
|
| CY7C1387D-167AXCT |
18-Mbit (512 K 36/1 M 18) Flow-Through SRAM
|
Cypress
|
| HYI39S512160A |
512-Mbit Synchronous DRAM
|
Qimonda
|
| CY7C1049CV33-12ZSXA CY7C1049CV33-12ZSXAT CY7C1049C |
4-Mbit (512 K 8) Static RAM
|
Cypress
|
| CY7C1443AV33 CY7C1441AV33-133AXC CY7C1441AV33-133A |
36-Mbit (1 M x 36/2 M x 18/512 k x 72) Flow-Through SRAM
|
Cypress Semiconductor
|
